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The external-electric-field effect and the doping effect on a modulation-doped finite-length GaAs/AlxGa1−xAs superlattice have been studied by solving the Schrödinger-Kohn-Sham equation and the Poisson equation self-consistently. In the heavy-doping case, the external electric field makes electrons sequentially tunnel through several potential barriers, and accumulates electrons near one side of the finite-length superlattice. The collective motion of the electrons results in high- and low-field domains in the superlattice. We have found that Wannier-Stark localization exists only in the high-field domain, and that the electronic states are not evenly spaced. The electric-field-induced (doping induced) depopulation (population) of subbands has been studied. We have also found oscillatory behavior of the calculated conductivity near the Fermi energy as a function of the external electric field.
Yu, R. H. (1994). Wannier-Stark localization in modulation-doped multiple-quantum-well structures. Physical Review B, 49(7), 4673–4678. https://doi.org/10.1103/physrevb.49.4673
Physical Review B
© 1994 American Physical Society
This article was originally published in Physical Review B. The full-text article from the publisher can be found here.